N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES •30V,60A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. •SuperhighdensecelldesignforextremelylowRDS(ON). •Highpowerandcurenthandingcapability. •TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,60A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=18.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

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