N-Channel Enhancement Mode Field Effect Transistor

FEATURES 5V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 55V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

N Channel MOSFET

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

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