N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ● TO-220 & TO-263 package.

N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

PECL termination

DESCRIPTION Single channel, RC-type positive emitter-coupled logic (PECL) clock termination with integrated diodes, providing electrostatic discharge (ESD) protection up to 2 kV. Using thin film-on-silicon technology the PSSI3120CA integrates three resistors, one capacitor and two diodes in a SOT