位置：首页 > IC中文资料第9975页 > CEP10N4
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP10N4 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 |   | |
CEP10N4 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | |
CEP10N4产品属性
- 类型
描述
- 型号
CEP10N4
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEP |
24+ |
NA/ |
3658 |
原装现货,当天可交货,原型号开票 |
|||
TI |
24+ |
VQFN-28 |
10000 |
公司现货库存,支持实单 |
|||
CET |
25+ |
TO-220 |
30 |
原装正品,假一罚十! |
|||
CET/華瑞 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
25+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
CET/華瑞 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
24+ |
TO2203 |
78 |
||||
CET/華瑞 |
2407+ |
con |
10750 |
只有原装!量大可以订!一片起卖! |
|||
CET |
23+ |
TO-220 |
10065 |
原装正品,有挂有货,假一赔十 |
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CEP10N4规格书下载地址
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DdatasheetPDF页码索引
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