N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V, 10A, RDS(ON) = 13.5mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

N-Channel Enhancement Mode Field Effect Transistor

94 Series Flanged Comms And Network Enclosure

Product ove r v i ew Flanged low profile and deep profile plastic housings with removable end panels. Ideal for surface mounted communication equipment such as Wi-Fi routers. • Stylishly designed ABS plastic case with double detachable panels • Flanged sides for surface or wall mounting •

Wire Protector Terminal Blocks

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MACHINE SCREW PAN PHILLIPS 10-32

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SAW Tx filter 836.5 MHz

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