P-Channel Enhancement Mode MOSFET

FEATURES ● -60V, -3A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 240mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.7A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 165mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

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High Perform Instr, 1 Pr #22 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 22AWG (7x30) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

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