P-Channel Enhancement Mode MOSFET

FEATURES ● -60V, -3A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 240mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.7A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 165mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

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CAR ALTERNATOR VOLTAGE REGULATOR

DESCRIPTION The L9407F is a monolithic multifunction alternator voltage regulator intended for use in automotive application. It includes the control section, the field power stage, fault diagnostic circuit which drives a warning lamp, and the protection against short circuits ■ FULLY MONOLITHIC

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –3.0 A, –60 V. RDS(ON) = 150 mΩ @ V

PRIMUS Powerful Scan-Rate Converter including Multistandard Color Decoder

Introduction The VSP 94x2A (PRIMUS) is a new component of the Micronas MEGAVISION® IC set in a CMOS embedded DRAM technology. The VSP 94x2A comprises all main functions of a digital featurebox in one monolithic IC. The number of features is limited in favor of a lowcost solution, but no trade-off

P-Channel 60-V (D-S), 175C MOSFET

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