N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V. RDS(ON) = 9 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

N-Channel MOSFET uses advanced trench technology

文件：1.33448 Mbytes Page：4 Pages

N Channel MOSFET

600mA CMOS LDO

General Description The AME8806/8809/8842 family of positive, linear regulators feature low quiescent current (30mA typ.) with low dropout voltage, making them ideal for battery applica tions. The space-saving SO-8 package is attractive for Pocket and Hand Held applications. Features ● Ve

600mA CMOS LDO

General Description The AME8806/8809/8842 family of positive, linear regulators feature low quiescent current (30mA typ.) with low dropout voltage, making them ideal for battery applica tions. The space-saving SO-8 package is attractive for Pocket and Hand Held applications. Features ● Ve

600mA CMOS LDO

General Description The AME8806/8809/8842 family of positive, linear regulators feature low quiescent current (30mA typ.) with low dropout voltage, making them ideal for battery applica tions. The space-saving SO-8 package is attractive for Pocket and Hand Held applications. Features ● Ve

PLL FREQUENCY SYNTHESIZER FOR PAGER

文件：212.42 Kbytes Page：14 Pages

Radial error signal processor for compact disc players

文件：94.17 Kbytes Page：16 Pages