P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.9A, RDS(ON) = 24mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

PWM CHOPPER TYPE BIPOLAR STEPPING MOTOR DRIVER

文件：470.13 Kbytes Page：25 Pages

PWM CHOPPER TYPE BIPOLAR STEPPING MOTOR DRIVER

文件：470.13 Kbytes Page：25 Pages