N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 10A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

N-Channel Enhancement Mode Field Effect Transistor

Microphone Cable, 1 Conductor 25 AWG, TC

Product Description 25 AWG stranded (7x33) composite copper conductor, EPDM rubber insulation, rayon braid + TC braid shield (80 coverage), cotton serve, cotton serve, EPDM rubber jacket.

MALE/FEMALE THREADED STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

−2 V to 70 V Wide Input Voltage Range, 2.2 MHz High Bandwidth, Current-Sense Amplifier with PWM Rejection

GENERAL DESCRIPTION The AD8410A1 is a high voltage, high bandwidth current-sense amplifier. The device features an initial gain of 20 V/V, with a 2.2 MHz bandwidth with a maximum ±0.13 gain error over the entire temperature range. The buffered output voltage directly interfaces with any typic

MALE/FEMALE THREADED STANDOFFS

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High Voltage, High Bandwidth Current Sense Amplifier

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