Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

双N沟道增强型场效应晶体管

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Dual N-Channel Enhancement Mode Field Effect Transistor

Tone ringer IC for telephone set

The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the outp

Tone ringer IC for telephone set

The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the outp

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DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

New Application of Rem ote Fan Controller BA8206 BA4

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