N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 15A, RDS(ON) = 7.5 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 14.5A, RDS(ON) = 7.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 10 mW @VGS = 4.5V.

N Channel MOSFET

Teck90 1000V, 3G C #68 Str BC, XLPE Ins M4, PVC Jkt, SIA Armor, Blk PVC Jkt, CSA HL SUN RES -40C

Product Description Teck90 1000V, 3+G Conductor 6+8AWG (7x14H) Bare Copper, XLPE Insulation M4 Color Code, PVC Inner Jacket, Steel Interlock Armor, Black PVC Outer Jacket, CSA HL SUN RES -40C

EXTENSION SPRINGS

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SINGLE POLE, THREE THROW CONNECTORIZED SWITCHES

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TEST JACKS

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Component1 6 X 1 PAIR

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