P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-9A RDS(ON)

P-ChannelEnhancementModePowerMOSFET

GENERALFEATURES| @Vos=-30Vjo=9A| ©Rosczmogesmioy| ®Ros(Ov=35mO@Ves=4.5V|

P-ChannelMOSFETusesadvancedtrenchtechnology

文件：1.29267 Mbytes Page：4 Pages

P-ChannelEnhancementModeFieldEffectTransistor

文件：396.07 Kbytes Page：4 Pages

ARX4435TransceiverforMacairH009Specification

GeneralDescription TheAeroflexLaboratoriesIncorporatedmodelARX4435andARX4435FParenewgenerationmonolithictransceiverswhichprovidescompliancewithMacairH009databusrequirements. ThemodelARX4435andARX4435FPperformthefront-endanalogfunctionofinputtingandoutputtin

P-ChannelMOSFET

Plastic-EncapsulateMosfets FEATURES •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •VDS=-30V,ID=-8A •RDS(on)(m-ohm) 0.020@VGS=-10V,ID=-8A 0.030@VGS=-4.5V,ID=-5A APPLICATIONS •LoadSwitches •B

P-ChannelEnhancementModePowerMOSFET

Description The4435usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

DELAYMODULES,TTL,SURFACEMOUNTED

文件：137.17 Kbytes Page：1 Pages

P-Channel30-V(D-S)MOSFET

文件：1.00935 Mbytes Page：9 Pages