P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.8A , RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

P-Channel 30-V (D-S) MOSFET

• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs

P-Channel Enhancement Mode MOSFET

Features • -30V/-5.3A , RDS(ON)=32mΩ(typ.) @ VGS=-10V RDS(ON)=50mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Pow

DELAY MODULES,TTL,SURFACE MOUNTED

文件：137.17 Kbytes Page：1 Pages

STEMMA Wired Tactile Push-Button Pack - 5 Color Pack

文件：200.18 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：368.8 Kbytes Page：5 Pages