P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -9.3A, RDS(ON) = 18mW @VGS = -10V. RDS(ON) = 30mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

P-Channel MOSFET uses advanced trench technology

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P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

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