Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N Channel MOSFET

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJN3308R

400MHz, Ultra-Low-Distortion Op Amps

General Description The MAX4108/MAX4109/MAX4308/MAX4309 op amps combine ultra-high-speed performance with ultra-low-distortion operation. The MAX4108 is compensated for unity-gain stability; the MAX4109, MAX4308, and MAX4309 are compensated for minimum closed-loop gains (AVCL) of 2V/V, 5V/V, and

75 Ohm RF Digital Attenuator 5-bit, 31 dB, DC - 4.0 GHz

文件：519.19 Kbytes Page：11 Pages

Solid State LED Lamps-Ultra Brite 240 mcd (red) T-1 3/4 (5mm)

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Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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