P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -6.2A, RDS(ON) = 33mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

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15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceivers with Green Idle?

GENERAL DESCRIPTION The ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E line of driver/receiver products is designed to fully meet the EIA-232 standard while operating with a single 2.7 V to 3.6 V power supply. The devices feature an on-board charge pump dc-to-dc converter, eliminating the need for

15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceivers with Green Idle?

GENERAL DESCRIPTION The ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E line of driver/receiver products is designed to fully meet the EIA-232 standard while operating with a single 2.7 V to 3.6 V power supply. The devices feature an on-board charge pump dc-to-dc converter, eliminating the need for

Nylon Cable Clamps

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Heyco짰 Nylon Cable Clamps

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KR Electronics part number 3307 is a 1200 MHz lowpass filter

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