P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -7.0A, RDS(ON) = 32mW @VGS = -10V. RDS(ON) = 50mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P Channel MOSFET

P-Channel MOSFET uses advanced trench technology

文件：1.24862 Mbytes Page：5 Pages

P-Channel Enhancement Mode Field Effect Transistor

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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ● High Input Impedance ● Low Saturation Voltage ● Enhancement Mode ● 20V Gate Drive Applications: ● High Power Switching ● Motor Control

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