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FEATURES ■30V,7.6A,RDS(ON)=22mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■-30V,-5.9A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=52mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

DualEnhancementModeFieldEffectTransistor(NandPChannel)

30V,7.6A,RDS(ON)=22mW@VGS=10V. FEATURES RDS(ON)=33mW@VGS=4.5V. -30V,-5.9A,RDS(ON)=36mW@VGS=-10V. RDS(ON)=52mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisac

DualEnhancementModeFieldEffectTransistor(NandPChannel)

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GeneralDescription TheBA3259HFPandBA30E00WHFPare2-output,low-saturationregulators.Theseunitshavebotha3.3Vfixedoutputaswellasavariableoutputwithavoltageaccuracyof±2,andincorporateanovercurrentprotectioncircuittopreventICdestructionduetooutputshortingalon

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Heyco-Flex™MountingBrackets

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