Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. ■ -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. FEATURES RDS(ON) = 33mW @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is ac

N+P Power MOSFET

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Dual Low-Dropout Voltage Regulator

General Description The BA3259HFP and BA30E00WHFP are 2-output, low-saturation regulators. These units have both a 3.3 V fixed output as well as a variable output with a voltage accuracy of ±2, and incorporate an overcurrent protection circuit to prevent IC destruction due to output shorting alon

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

Dual SP3T Analog Switch

文件：337.62 Kbytes Page：10 Pages

Dual SP3T Analog Switch

文件：337.62 Kbytes Page：10 Pages