Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7A, RDS(ON) = 24mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.9A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 34mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V.

N Channel MOSFET

N Channel MOSFET

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

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