Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. RDS(ON) = 33mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N Channel MOSFET

N-Channel MOSFET uses advanced trench technology

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Dual N-Channel Enhancement Mode Field Effect Transistor

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4-Bit Programmable Synchronous Buck Controllers

GENERAL DESCRIPTION The ADP3158 and ADP3178 are highly efficient synchronous buck switching regulator controllers optimized for converting a 5 V main supply into the core supply voltage required by high performance processors. These devices use an internal 4-bit DAC to read a voltage identifica

4-Bit Programmable Synchronous Buck Controllers

GENERAL DESCRIPTION The ADP31931 is a highly efficient, multiphase, synchronous buck switching regulator controller optimized for converting a 12 V main supply into the core supply voltage required by high performance Intel processors. It uses an internal 8-bit DAC to read a voltage identificat

짹15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers

±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers The Intersil ISL317XE are ±15kV IEC61000 ESD Protected, 3.3V-powered, single transceivers that meet both the RS-485 and RS-422 standards for balanced communication. These devices have

Full Bridge Power Amplifier

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