N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

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General Description The AAT3172 is a high output current, high efficiency, low noise, low profile charge pump DC/DC converter, ideal for multi-function LED photo-flash applications where solution cost, size, and efficiency are critical. Features • VIN Range: 2.7V to 5.5V • 600mA Output Current

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