P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.5A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

Readout Modules with Peak-Hold Feature

FEATURES • For use with Vishay Measurements Group 2300 Signal Conditioning Amplifier System • Provides real-time digital readout with peak-hold capability • Both maximum and minimum signals are sorted independently • Front-panel jacks are provided for utility inputs such as the bridge

Nylon Hose Clamps

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Nylon Hose Clamps

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REMOVED LEAD FREE NOTE ADDED RoHS

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ALL DIMENSIONS ARE IN MILLIMETERS

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