P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 62mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 75mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

文件：430.39 Kbytes Page：4 Pages

P Channel MOSFET

Silicon NPN Transistor Quad, General Purpose

Silicon NPN Transistor Quad, General Purpose

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2321 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER

文件：409.05 Kbytes Page：22 Pages

DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER

文件：409.05 Kbytes Page：22 Pages

DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER

文件：409.05 Kbytes Page：22 Pages