P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 62mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 75mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

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P Channel MOSFET

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