P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

P Channel MOSFET

丝印代码：658；MOSFET

Features - Simple drive requirement. - Low on-resistance. - Small package outline.

P-Channel Enhancement Mode Field Effect Transistor

文件：345.81 Kbytes Page：4 Pages

MOSFET

Silicon NPN Transistor High Speed Switch

Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems, and switching applications.

4-Channel Audio Processor IC

Description PT2313L is a four-channel digital control audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance, Front/Rear Fader Processor are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic

4-Channel Audio Processor IC

Description PT2313L is a four-channel digital control audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance, Front/Rear Fader Processor are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

200 4-CHARACTER 5X7 DOT MATRIX SERIAL INPUT ALPHANUMERIC MILITARY DISPLAY

文件：413.6 Kbytes Page：11 Pages