Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package. ■ ESD Protected: HB

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.5A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. Lead free product is acquired. ESD Protected: HBM 2000 V

N Channel MOSFET

VERSATILE 20 SEC INSTANT VOICE ROM

GENERAL DESCRIPTION API8208A is a high quality voice synthesizer capable of varying playback duration. A proprietary ADPCM algorithm is used. The audio message is stored in a 512K bits on-chip EPROM which can store up to 20 seconds of voice data at 6 KHz sample rate. FEATURES • Develop

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

ATM Interconnect

Description The CelXpres T8208 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance

REALTEK SINGLE CHIP OCTAL 10/100 MBPS FAST ETHERNET TRANSCEIVER

文件：546.2 Kbytes Page：40 Pages

5.8W DUAL AUDIO POWER AMPLIFIER

文件：437.09 Kbytes Page：9 Pages