Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package. ■ ESD Protected: HB

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.5A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. Lead free product is acquired. ESD Protected: HBM 2000 V

Electronic, 2 C #18 Str TC, EPDM Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 2 Conductor 18AWG (16x30) Tinned Copper, EPDM Insulation, Overall Tinned Copper Braid(73) Shield, PVC Outer Jacket

High Voltage, Precision Difference Amplifier

GENERAL DESCRIPTION The AD8208 is a single-supply difference amplifier ideal for amplifying and low-pass filtering small differential voltages in the presence of a large common-mode voltage. The input commonmode voltage range extends from −2 V to +45 V at a single +5 V supply. The AD8208 is quali

High Voltage, Precision Difference Amplifier

GENERAL DESCRIPTION The AD8208 is a single-supply difference amplifier ideal for amplifying and low-pass filtering small differential voltages in the presence of a large common-mode voltage. The input commonmode voltage range extends from −2 V to +45 V at a single +5 V supply. The AD8208 is quali

T3/DS3/E3/STS-1 Input/Output Transformers

文件：182.16 Kbytes Page：1 Pages

High Voltage, Precision Difference Amplifier

文件：344.99 Kbytes Page：20 Pages