| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CED50N06G | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 40A , RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 |   | |
CED50N06G | N Channel MOSFET | CET 华瑞 | | |
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：812.59 Kbytes Page：10 Pages | WXDH 东海半导体 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.72 Kbytes Page：10 Pages | WXDH 东海半导体 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.77 Kbytes Page：10 Pages | WXDH 东海半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
TO-251 |
53410 |
原装正品,假一罚十! |
|||
VBsemi |
24+ |
TO251 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET/華瑞 |
23+ |
TO-251 |
56449 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
TO-251 |
7300 |
专注配单,只做原装进口现货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
CET |
21+ |
TO-251 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHI |
24+ |
SSOP24L |
9918 |
公司现货库存,支持实单 |
|||
VB |
100 |
||||||
VBSEMI/台湾微碧 |
24+ |
TO-251 |
60000 |
全新原装现货 |
CED50N06G规格书下载地址
CED50N06G参数引脚图相关
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CED50N06G数据表相关新闻
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-11-25
DdatasheetPDF页码索引
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