P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired.

P Channel MOSFET

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJN3311R

High-Speed, Low-Power, Single-Supply, Multichannel, Video Multiplexer-Amplifiers

General Description The MAX4310–MAX4315 single-supply mux-amps combine high-speed operation, low-glitch switching, and excellent video specifications. The six products in this family are differentiated by the number of multiplexer inputs and the gain configuration. Features ♦Singl

High-Speed, Low-Power, Single-Supply, Multichannel, Video Multiplexer-Amplifiers

General Description The MAX4310–MAX4315 single-supply mux-amps combine high-speed operation, low-glitch switching, and excellent video specifications. The six products in this family are differentiated by the number of multiplexer inputs and the gain configuration. Features ♦Singl

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.