N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

10-Bit 75 MSPS A/D Converter

GENERAL DESCRIPTION The AD9060 A/D converter is a 10-bit monolithic converter capable of word rates of 75 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. I

10-Bit 75 MSPS A/D Converter

GENERAL DESCRIPTION The AD9060 A/D converter is a 10-bit monolithic converter capable of word rates of 75 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. I

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and r

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

1/2 DUTY, 160-OUTPUT STATIC LCD DRIVER

GENERAL DESCRIPTION The ML9060 consists of a 320-bit shift register, a 320-bit data latch, 160 sets of LCD drivers, and a common signal generator circuit. The LCD display data is input serially to the shift register from the DATA IN pin in synchronization with the CLOCK IN signal, and is stored