N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 33A, RDS(ON) = 23mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 33A, RDS(ON) = 20mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = 4.5V.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 33A, RDS(ON) = 23mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

Optocoupler, Phototransistor Output, Low Input Current

DESCRIPTION The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DI

Optocouplers

DESCRIPTION The SFH6106, 6116, 6156, 6186, 6206, 6286 families of optocouplers are lead bent for SMD applications. They are electrically equivalent to the SFH610, 615, 618, 620, and 628 families of optocouplers. FEATURES • SMD Versions of SFH610, 615, 618, 620, 628 • Available on Tape and Reel

Socket 478 Pentium짰 4/Celeron짰 D/Celeron Processor Card with VGA/Dual GbE LAN

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Optocoupler, Phototransistor Output, Low Input Current

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