Single P-Channel Enhancement Mode MOSFET

FEATURES ■ -20V, -25.4A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 155mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

Single P-Channel Enhancement Mode MOSFET

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

PNP NPN Darlington 3-phase motor drive

PNP + NPN Darlington 3-phase motor drive

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件：230.18 Kbytes Page：2 Pages