N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 55V, 15A, RDS(ON) = 80 mΩ @VGS = 10 V. RDS(ON) = 85 mΩ @VGS = 5 V. • Super high dense cell design for extremely low RDS(ON). • High power and current handling capability. • TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n• 55V, 15A, RDS(ON) = 80 mΩ  @VGS = 10 V.  \n               RDS(ON) = 85 mΩ  @VGS = 5 V.\n• Super high dense cell design for extremely low RDS(ON).\n• High power and current handling capability.\n• TO-220 & TO-263 package. • 55V, 15A, RDS(ON) = 80 mΩ  @VGS = 10 V.  \n               RDS(ON) = 85 mΩ  @VGS = 5 V.\n• Super high dense cell design for extremely low RDS(ON).\n• High power and current handling capability.\n• TO-220 & TO-263 package.;

HEX non-inverting buffers

DESCRIPTION The HEF4050B provides six non-inverting buffers with high current output capability suitable for driving TTL or high capacitive loads. Since input voltages in excess of the buffers’ supply voltage are permitted, the buffers may also be used to convert logic levels of up to 15 V to s

Hex Inverting,Non-Inverting Buffer

文件：129.6 Kbytes Page：6 Pages

Hex Inverting,Non-Inverting Buffer

文件：129.6 Kbytes Page：6 Pages

Hex Inverting,Non-Inverting Buffer

文件：129.6 Kbytes Page：6 Pages

Hex Inverting,Non-Inverting Buffer

文件：129.6 Kbytes Page：6 Pages