GENERAL PURPOSE SILICON DIODES

• GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 65

封装/外壳：DO-213AA 包装：散装 描述：DIODE GEN PURP 250V 200MA DO213 分立半导体产品 二极管 - 整流器 - 单

GENERAL PURPOSE SILICON DIODES

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR . . designed primarily for application as a high-power linear amplifier from 1.5 to 30 MHz, in single sideband mobile, marine and base station equipment. • Low-Cost, Common-Emitter TO-220AB Package • Specified 28 Volt, 30 MHz Performance — Output Power = 40 W

Silicon NPN Transistor RF High Frequency Amplifier

Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: • Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB

PROGRAMMING MANUAL

PRODUCT OVERVIEW The ST 486 DX core is based on the design of the SGS-THOMSON standard 486 DX4 product. The core is capable of operating at the “external” bus speed or at two or three times the bus speed up to a maximum of 120MHz. Since the design is fully static the core can operate at any frequ

100mW STEREO HEADPHONE AMPLIFIER WITH STANDBY MODE

DESCRIPTION The TS486/7 is a dual audio power amplifier capable of driving, in single-ended mode, either a 16 or a 32Ω stereo headset. Capable of descending to low voltages, it delivers up to 90mW per channel (into 16Ω loads) of continuous average power with 0.3 THD+N in the audio bandwitdth fro

NS486TMSXF Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems

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