SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 20A TO-277B 分立半导体产品 二极管 - 整流器 - 单

Standard Schottky

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

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LOW VF SCHOTTKY RECTIFIER

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Ultra low forward voltage drop, low power loss

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Ultra low forward voltage drop, low power loss

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