SMD Schottky Barrier Diode

IO = 500 mA VR = 40 Volts Features Low forward Voltage Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. Terminals: Gold plated, solderable per MI

封装/外壳：1005（2512 公制） 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 500MA 1005 分立半导体产品 二极管 - 整流器 - 单

SMD Schottky Barrier Diode

IO = 500 mA VR = 40 Volts Features Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, so

封装/外壳：1005（2512 公制） 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 500MA 1005 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifiers Diodes

1.0 Ampere Schottky Power Rectifiers

Features • 0.5 ampere; forward voltage less than 460 mv. • 400 milliwatt Power Dissipation package. • Compact surface mount package with same footprint as mini-melf.

SURFACE MOUNT SCHOTTKY BARRIER DIODES

FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection.

SCHOTTKY RECTIFIER

DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packages in SOD-123, these devices are intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the p

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=50Ω

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=150Ω