SMD Schottky Barrier Diode

Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, method 2026. P

封装/外壳：1005（2512 公制） 包装：卷带（TR） 描述：DIODE SCHOTTKY 30V 100MA 1005 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifiers Diodes, VRRM=35V, VR=30V, IO=0.1A - RevB905035 datasheet

SMD Schottky Barrier Diode

Io = 100 mA VR = 30 Volts Features Halogen free. Designed for mounting on small surface. Extremely thin package. Low stored charge. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per

SMD Schottky Barrier Diode

Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Mark

SMD Schottky Barrier Diode

Io = 100 mA VR = 30 Volts Features Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, so

SMD Schottky Barrier Diode

Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Mark

SMD Schottky Barrier Diode

Io = 100 mA RoHS Device Halogen Free VR = 30 Volts Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package, molded plastic. - Terminals: Gold plat

封装/外壳：1005（2512 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 100MA 1005 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifiers Diodes, VRRM=35V, VR=30V, IO=0.1A

Schottky Barrier Rectifiers Diodes

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 - Channel Logic To High-Voltage Level Translator

8 - Channel Logic To High-Voltage Level Translator

0.8A SCRs

DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluores cent tubelamps.

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode

文件：160.99 Kbytes Page：5 Pages

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode

文件：160.99 Kbytes Page：5 Pages