DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

封装/外壳：14-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC） 门和反相器

Dual 4-Input NAND Gate

文件：30.05 Kbytes Page：5 Pages

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes Page：13 Pages

DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes Page：13 Pages

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74ACT20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The dev

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74ACT20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The dev

DUAL 4-INPUT NAND GATE

文件：175.6 Kbytes Page：8 Pages

Dual 4?묲nput NAND Gate

文件：122.1 Kbytes Page：8 Pages

DUAL 4-INPUT NAND GATE

文件：175.6 Kbytes Page：8 Pages