1 WATT CAPABILITY WITH PROPER HEAT SINKING

• 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

Zener Diode Single 100V, 5%, 350Ohm, 1000mW Die

1 Watt capability with proper hear sinking. \nAll junctions are completely protected with silicon dioxide. \nCompatible with all wire bonding and die attach techniques, with the exception of solder reflow.;

封装/外壳：模具 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

Optoisolator NPN Darlington Transistor Output

Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current. Features:

SDH/SONET STM1/OC3 and STM4/OC12 transceiver

文件：127.17 Kbytes Page：28 Pages

SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers

文件：151.81 Kbytes Page：28 Pages

SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers

文件：151.81 Kbytes Page：28 Pages

SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers

文件：151.81 Kbytes Page：28 Pages