丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

850 - 950 MHz RF Front End

文件：472.5 Kbytes Page：15 Pages

850 ??950 MHz RF Front End

文件：727.82 Kbytes Page：17 Pages

封装/外壳：16-VQFN 裸露焊盘 包装：带 描述：IC RF FRONT-END 16VQFN RF/IF，射频/中频和 RFID 射频前端（LNA + PA）

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

丝印代码：CC1190；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

K Band Mixer

Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithogr

Schottky Barrier Rectifier

文件：51.2 Kbytes Page：4 Pages

Ultra High Speed Operational Amplifier

文件：778.15 Kbytes Page：11 Pages

Ultra High Speed Operational Amplifier

文件：778.15 Kbytes Page：11 Pages

Ultra High Speed Operational Amplifier

文件：778.15 Kbytes Page：11 Pages