N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • UHF applications such

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

UK Plug Power Adapter

文件：78.1 Kbytes Page：2 Pages

A broad portfolio of high performance, best-in-class Serial Memory Products to meet all your design requirements.

文件：1.07567 Mbytes Page：16 Pages

25 AMP SUB-MICRO AUTOMOTIVE RELAY

文件：91.77 Kbytes Page：2 Pages