丝印代码：C945；TO-92 Plastic-Encapsulate Transistors

Complementary to FEATURE Excellent hFE linearity Low noise 2SA733

丝印代码：CR；SOT-23 Plastic-Encapsulate Transistors

FEATURE Excellent hFE Linearity Low noise Complementary to A733

Complementary to A733

FEATURES • Complementary to A733

丝印代码：CR；Excellent hFE Linearity

FEATURE Excellent hFE Linearity Low noise Complementary to A733

NPN Plastic Encapsulate Transistor

FEATURES Excellent hFE Linearity Low noise Complementary to A733

Overload Protection Disks

Features l Coated thermistor disk l Manufacturer’s logo and type designation stamped on in white l Low resistance l For rated currents of up to 2,5 A l UL approval (E69802) l VDE approval (exception: C915) Applications l Overcurrent and short-circuit protection

NPN TRANSISTOR

AF OUTPUT AMPLIFIER

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● Excellent hFE linearity ● Low noise ● Complementary to A733

NPN Transistors

TO-92 Plastic-Encapsulate Transistors

SOT-92 Plastic-Encapsulate NPN Transistors

PNP SILICON TRANSISTOR

APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching.

三极管TRANSISTOR

小信号三极管

NPN小信号三极管

Low noise

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TO-92 Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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SOT-23 Plastic-Encapsulate Transistors

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Plastic-Encapsulate Transistors

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丝印代码：CR；Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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TRANSISTOR (NPN )

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SOT-23 Plastic-Encapsulate Transistors

FEATURE Excellent hFE Linearity Low noise Complementary to A733

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity. : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) • Low Noise : NF=1dB(Typ.). at f=1kHz • Complementary to KTA733B(O, Y, GR class).

GENERAL PURPOSE TRANSISTOR NPN 200mW 150mA 50V

DESCRIPTION The C945 is availab le in SOT 23 p ackage FEATURES  Power Dissipation PCM: 0.2W (Tamb=25°C)  Collector Current ICM: 0.15A  Collector-Base Voltage V(BR)CBO: 60V  Operating and Storage Junction Temperature Range TJ, TSTG: -55 °C to +150°C  Availabl e i n SOT 23 p ackag

GENERAL PURPOSE TRANSISTOR NPN 200mW 150mA 50V

DESCRIPTION The C945 is availab le in SOT 23 p ackage FEATURES  Power Dissipation PCM: 0.2W (Tamb=25°C)  Collector Current ICM: 0.15A  Collector-Base Voltage V(BR)CBO: 60V  Operating and Storage Junction Temperature Range TJ, TSTG: -55 °C to +150°C  Availabl e i n SOT 23 p ackag

GENERAL PURPOSE TRANSISTOR NPN 200mW 150mA 50V

DESCRIPTION The C945 is availab le in SOT 23 p ackage FEATURES  Power Dissipation PCM: 0.2W (Tamb=25°C)  Collector Current ICM: 0.15A  Collector-Base Voltage V(BR)CBO: 60V  Operating and Storage Junction Temperature Range TJ, TSTG: -55 °C to +150°C  Availabl e i n SOT 23 p ackag

GENERAL PURPOSE TRANSISTOR NPN 200mW 150mA 50V

DESCRIPTION The C945 is availab le in SOT 23 p ackage FEATURES  Power Dissipation PCM: 0.2W (Tamb=25°C)  Collector Current ICM: 0.15A  Collector-Base Voltage V(BR)CBO: 60V  Operating and Storage Junction Temperature Range TJ, TSTG: -55 °C to +150°C  Availabl e i n SOT 23 p ackag

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity. : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) • Low Noise : NF=1dB(Typ.). at f=1kHz • Complementary to KTA733.

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA733. FEATURES • Low current (max. 100 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification.

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

High Voltage

DESCRIPTION ·High Voltage ·Excellent hFE linearity APPLICATIONS ·Dsigned for use in driver stage of AF amplifier and low speed switching

NPN Silicon Planar Epitaxial Transistor

NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2SC945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applications

NPN Plastic Encapsulate Transistor

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SOT-23 Plastic-Encapsulate Transistors

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NPN Transistors

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Plastic-Encapsulate Transistor

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Plastic-Encapsulate Transistor

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封装/外壳：径向，圆片式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 4700PF 400VAC Y5V RAD 电容器 陶瓷电容器

封装/外壳：径向，圆片式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 4700PF 400VAC Y5V RAD 电容器 陶瓷电容器

Audio Frequency Amplifier High Frequency OSC.

Audio Frequency Amplifier High Frequency OSC. • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz (Typ) • Complement to FJX733

NPN (AUDIO, HIGH FREQUENCY AMPLIFIER, OSC.)

Audio Frequency Amplifier, High Frequency OSC. 1. Complement to KSA733 2. Collector-Base Voltage Vcbo=60V 3. High Current Gain Bandwidth Product Ft = 300MHz (Typ)

Audio Frequency Amplifier & High Frequency OSC.

Features • Audio Frequency Amplifier and High-Frequency OSC. • Complimentary to KSA733 • Collector-Base Voltage: VCBO = 60 V • High Current Gain Bandwidth Product: fT = 300 MHz (Tyical) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

Audio Frequency Amplifier & High Frequency OSC.

Features • Audio Frequency Amplifier and High-Frequency OSC. • Complimentary to KSA733 • Collector-Base Voltage: VCBO = 60 V • High Current Gain Bandwidth Product: fT = 300 MHz (Tyical) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

Audio Frequency Amplifier & High Frequency OSC.

Features • Audio Frequency Amplifier and High-Frequency OSC. • Complimentary to KSA733 • Collector-Base Voltage: VCBO = 60 V • High Current Gain Bandwidth Product: fT = 300 MHz (Tyical) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)