PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

[USHA] PRE-AMPLIFIER, LOW LEWEL & LOW NOICE • High total power dissipation. ( PT = 450 mW) • High hfe and good linearity • Complementary to SS9015

EPITAXIAL PLANAR NPN TRANSISTOR

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10C 22 AWG 7/30 TC PVC / PVC

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包装：散装 描述：CABLE 10COND 22AWG GRAY 1000' 电缆，电线 多芯导线

包装：线轴 描述：CABLE 10COND 22AWG GRAY 500' 电缆，电线 多芯导线

10C22 FR-LSZH, UNSHIELDED FR-LSZH Jacket EXZEL FR-LSZH Cable

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NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015