封装/外壳：模块 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIPLEXER 35MHZ/484MHZ MODULE RF/IF，射频/中频和 RFID 射频多路复用器

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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Automated probe manufacturing enables low cost and short lead time

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