封装/外壳：模块 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIPLEXER 35MHZ/484MHZ MODULE RF/IF，射频/中频和 RFID 射频多路复用器

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Silicon Power Rectifier Diode, 85 Amp

Features: ● Short Reverse Recovery Time ● Low Stored Charge ● Available in Cathode–to–Case (NTE6036) or Anode–to–Case (NTE6037) Style

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR