250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features •High breakdown voltage, and high reliability through the use of a glass passivation layer •High-speed switching •Wide area of safe operation (ASO)

Transistor Silicon NPN Triple Diffused Mesa Type

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS ● High Voltage : VCBO = 1700 V ● Low Saturation Voltage : VCE (sat) = 3 V (Max.) ● High Speed : tf (2) = 0.1 µs (Typ.)

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

Features ♦ High breakdown voltage VCBO= 1500 V ♦ High speed switching tf= 0.15 msec (typ.) at fH= 64 kHz ♦ Isolated package TO–3PFM

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

• High breakdown voltage VCBO= 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

•  High breakdown voltage\n   VCBO= 1500 V\n\n•  High speed switching\n   tf = 0.15 µsec (typ.) at fH = 64 kHz\n\n•  Isolated package TO–3PFM

COLOUR TELEVISION

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PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the