250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO= 1500 V Low Saturation Voltage : VCE (sat)= 3 V (Max.) High Speed : tf= 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications.

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

High-Voltage Switching Applications

High-Voltage Switching Applications · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode.

RAYCHEM Tubing Products

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热缩管

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. ■ BD534, BD535, BD536, BD537 AND BD5

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp

High Slew Rate Op Amp