丝印代码：C5198；Silicon NPN Triple Diffused Type

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

Silicon NPN Triple Diffused Type

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

POWER TRANSISTORS

POWER TRANSISTORS Power Amplifier Applications. TO- 3PN Non Isolated Plastic Package

POWER TRANSISTORS

POWER TRANSISTORS Power Amplifier Applications. TO- 3PN Non Isolated Plastic Package

Low Cost, Industry Standard FDDI MIC Transceivers

Description The HFBR-511X family of transceivers from Hewlett-Packard consists of high performance, cost effective modules for optical data communication applications at the 100 Mbps/125 MBd rate. Features • Full Compliance with the FDDI PMD Standard • Full Compliance with the Optical Performa

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital ce

GENERAL PURPOSE PHOTO REFLECTOR?

文件：289.54 Kbytes Page：8 Pages

丝印代码：5198NL；Monolithic N-Channel JFET Duals

文件：73.25 Kbytes Page：6 Pages

Monolithic N-Channel JFET Duals

文件：73.25 Kbytes Page：6 Pages