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C4520价格
参考价格：￥1.9829
型号：C4520C0G3F100F 品牌：TDK Corporation 备注：这里有C4520多少钱，2025年最近7天走势，今日出价，今日竞价，C4520批发/采购报价，C4520行情走势销售排行榜，C4520报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
C4520 | MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 |  |   |
C4520 | MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | |
C4520 | CSeriesHighVoltageApplication 文件：2.37923 Mbytes Page：12 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
ISL6844ReferenceDesign:ISL6844EVAL3Z TheISL6840,ISL6841,ISL6842,ISL6843,ISL6844,ISL6845familyofadjustablefrequency,lowpower,pulsewidthmodulating(PWM)currentmodecontrollersisdesignedforawiderangeofpowerconversionapplicationsincludingboost,flyback,andisolatedoutputconfigurations.Peakcurrentmodeco | Intersil Intersil Corporation |  | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CSeriesHighVoltageApplication 文件：2.37923 Mbytes Page：12 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CSeriesCommercialGradeHighVoltage(1000Vandover) 文件：1.19794 Mbytes Page：7 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
封装/外壳：1808（4520 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10PF 3KV C0G 1808 电容器 陶瓷电容器 | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CommercialGrade(HighVoltage(1000Vandover)) 文件：130.78 Kbytes Page：1 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CSeriesHighVoltageApplication 文件：2.37923 Mbytes Page：12 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CSeriesCommercialGradeHighVoltage(1000Vandover) 文件：1.19794 Mbytes Page：7 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
封装/外壳：1808（4520 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 100PF 3KV C0G 1808 电容器 陶瓷电容器 | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | | |
CommercialGrade(HighVoltage(1000Vandover)) 文件：130.96 Kbytes Page：1 Pages | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | | |
C4520产品属性
- 类型
描述
- 型号
C4520
- 制造商
TDK
- 制造商全称
TDK Electronics
- 功能描述
MULTILAYER CERAMIC CHIP CAPACITORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TDK/东电化 |
24+ |
SMD |
42461 |
TDK原厂直供,全系列可订货。美金交易,大陆交货。 |
|||
HEC |
24+ |
SMD |
10000 |
公司现货库存,支持实单 |
|||
TDK/东电化 |
24+ |
NA/ |
4054 |
原装现货,当天可交货,原型号开票 |
|||
TDK |
2016+ |
SMD |
17000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TDK |
24+ |
SMD |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TDK/东电化 |
22+23+ |
SMD |
8000 |
新到现货，只做原装进口 |
|||
TDK |
25+ |
SMD |
904 |
原装正品,假一罚十! |
|||
TDK |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
TDK |
25+23+ |
SMD |
10753 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
30000 |
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- C44AFGR6200ZE0J
- C44AFGP6200ZE0J
- C44AFGP6150ZA0J
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KEMET的电容器在恶劣环境下具有300,000小时的使用寿命
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2019-3-7
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