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C431价格
参考价格：￥281.3029
型号：C431 品牌：Coilcraft 备注：这里有C431多少钱，2025年最近7天走势，今日出价，今日竞价，C431批发/采购报价，C431行情走势销售排行榜，C431报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
C431 | PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors |  |   |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR450-600AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging | POWEREX Powerex Power Semiconductors | | | |
2C20SOLIDTCSR-PVCPVCCOMMUNICATIONCABLE 文件：73.59 Kbytes Page：1 Pages | GENERALGeneral Cable Technologies Corporation 通用电气公司美国通用电气公司 |  | | |
封装/外壳：TO-200AB，A-PUK 包装：散装 描述：SCR 800V 950A PRESS-PAK 分立半导体产品 晶闸管 - SCR | PowerexIncPowerex, Inc 鑫鸿鑫鸿电子 |  | | |
封装/外壳：TO-200AB，A-PUK 包装：散装 描述：SCR 1KV 950A PRESS-PAK 分立半导体产品 晶闸管 - SCR | PowerexIncPowerex, Inc 鑫鸿鑫鸿电子 | | | |
TRIODES,POWER.REVERSE-BLOCKING:SCRS 文件：50.45 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
ESTABLISHEDRELIABILITYTO-5RELAYS 文件：143.66 Kbytes Page：6 Pages | WILLOWWillow Technologies Ltd 柳树科技柳树科技有限公司 |  | | |
WidebandBiasChokes 文件：198.78 Kbytes Page：2 Pages | COILCRAFTCoilcraft lnc. 线艺美国线艺公司 |  | | |
AdjustableAccurateReferenceSource 文件：795.37 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
LowJitter5pS 文件：133.84 Kbytes Page：2 Pages | OSCILENT Oscilent Corporation |  | | |
SurfaceMountFuses-Thin-FilmSurfaceMount 文件：83.74 Kbytes Page：1 Pages | Littelfuselittelfuse 力特力特公司 |  | |
C431产品属性
- 类型
描述
- 型号
C431
- 功能描述
电感器套件及配件 Power Inductor Kit 0.3-22 uH Values
- RoHS
否
- 制造商
Bourns
- 产品
SMD Inductor Kits
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装KOA |
24+ |
NA |
9000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
POWEREX |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
POWEREX |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
KOA SPEER |
24+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
|||
KOASPEER |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
4*4-100K |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
KOA |
25+23+ |
32624 |
绝对原装正品全新进口深圳现货 |
||||
PRX |
18+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
Powerex Inc. |
25+ |
TO-200AB A-PUK |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
500 |
C431芯片相关品牌
C431规格书下载地址
C431参数引脚图相关
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- C430C684M5U5TA7200
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- C430C474M5U5TA7200
- C430C474K5N5TAAUTO
- C430C473K1R5TA7200
- C430C473K1R5CA
- C430C473K1H5TAAUTO
- C430C472J5G5TA7200
- C430C472J1G5TA7200
- C430C472J1G5TA
- C430C392J5G5CA
- C430C333M1R5TA7200
- C430C332J5G5TA7200
- C430C332J1G5TA7200
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- C-421Y
C431数据表相关新闻
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2023-3-18C4532X7R1H475KT000N原装贴片电容TDK18138231376
产品等级：优级品 封装：SMD 耐压值：50（V） 批号：17+ 外形：方块状 应用范围：通用 允许偏差：±10（%
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2019-3-7
DdatasheetPDF页码索引
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