丝印代码：C3D08065；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 650V 25.5A TO252 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

Silicon Carbide Schottky Diode

文件：1.11022 Mbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ZRECTM 8A, 650V SIC SCHOTTKY DIO 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode

文件：509.12 Kbytes Page：6 Pages

丝印代码：E3D08065G；Silicon Carbide Schottky Diode E-Series Automotive

Features • 650V Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Higher System Level Efficiency • Incre