N-Type Silicon PIN Photodetectors

Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. Features • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 • Low Op

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (800 Volts Peak) The MOC3081, MOC3082 and MOC3083 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the function of Zero Voltage Crossing bilateral triac drivers. They a

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: • High Sensitivity: 1mA on the Input will Sink a TTL gate • High Isolation: 3550VDC, 1012Ω, 0.5pF