NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System

Microminiature Reed Relays

MICROMINIATURE REED RELAYS Ideally suited to the needs of Automated Test Equipment and RF requirements. The specification tables allow you to select the appropriate relay for your particular application. Slightly larger than the 2200 Series; these relays provide maximum versatility with options s

Specifications

Electrical Impedance 50 Ohms Frequency Range DC ~ 11 GHz Voltage Rating 1500 Volts Peak Dielectic Withstanding Voltage 2500 Volts RMS Insertion Loss .20 dB Max. Mechanical Mating 5/8-24 UNEF Threading Coupling Mating Torque 15 inch pounds (170 N.cm) Max. Cable Attachment Clamp Center Con

Real-Time Interrupt Controller

GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS

A High-Performance 8-Bit Slice Microprogram Sequencer

GENERAL DESCRIPTION The Am29112 is a high performance interruptible microprogram sequencer intended for use in very high speed microprogrammed machines and optimized for the new state-of-the-art ALUs and other processing components. The Am29112 is designed to operate in 10 MHz microprogrammed sys

1 KHz center frequency 50 ?

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